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APTM100UM60F-ALN
Single Switch MOSFET Power Module
SK S D
VDSS = 1000V RDSon = 60m max @ Tj = 25C ID = 129A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile
G
DK
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM100UM60F-ALN Rev 0
July, 2004
Tc = 25C
Max ratings 1000 129 97 516 30 60 2272 25 50 3000
Unit V A V m W A
APTM100UM60F-ALN
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1.5mA Min 1000
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Typ
Max 1.5 5 60 5 500
Unit V mA m V nA
VGS = 10V, ID = 64.5A VGS = VDS, ID = 15mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 129A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 129A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 129A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 129A, R G = 0.8
Min
Typ 31.1 5.28 0.96 1116 144 732 18 12 155 40 5.4 3.7 8.5 4.7
Max
Unit nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 129A IS = - 129A VR = 500V diS/dt = 600A/s IS = - 129A VR = 500V diS/dt = 600A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 21.6 58.3
Max 129 97 1.3 18 320 650
Unit A V V/ns ns C
July, 2004 2-6 APTM100UM60F-ALN Rev 0
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 129A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
APTM100UM60F-ALN
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.055 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM100UM60F-ALN Rev 0
July, 2004
APTM100UM60F-ALN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 Thermal Impedance (C/W) 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360
V GS=15, 10&8V
Transfert Characteristics 480 420 ID, Drain Current (A) 360 300 240 180 120 60 0 30 0 1 2 3 4 5 TJ =25C TJ =125C TJ =-55C 6 7 8 9
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
300 240 180 120 60 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
25
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 64.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150
July, 2004 4-6 APTM100UM60F-ALN Rev 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0 50
VGS =10V VGS=20V
100 150 200 250 300 350 ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM100UM60F-ALN
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 250 500 750 1000 1250 1500
July, 2004
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=64.5A
1000
limited by R DSon
100s
100
1ms
10 Single pulse TJ =150C 1 1
10ms
10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=129A TJ=25C
V DS =500V V DS=800V VDS=200V
10000
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website - http://www.advancedpower.com
5-6
APTM100UM60F-ALN Rev 0
APTM100UM60F-ALN
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 40 80 120 160 200 240 I D, Drain Current (A) Switching Energy vs Current
V DS=670V RG =0.8 T J=125C L=100H
Rise and Fall times vs Current 80 t d(off)
V DS =670V RG =0.8 T J=125C L=100H
tf
60
tr and tf (ns)
40 tr 20
t d(on)
0 40 80 120 160 200 I D, Drain Current (A) 240
Switching Energy vs Gate Resistance 20
V DS=670V ID=129A T J=125C L=100H
15
Switching Energy (mJ) Switching Energy (mJ)
12.5 10 7.5 5 2.5 0
VDS=670V RG=0.8 TJ=125C L=100H
E on
Eoff
16 12 8 4 0
Eoff
Eon
40
80
120
160
200
240
0
1
2
3
4
5
6
I D, Drain Current (A) Operating Frequency vs Drain Current
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
200
IDR, Reverse Drain Current (A)
250
1000 TJ=150C 100 TJ=25C
Frequency (kHz)
150 100 50 0 10 30
VDS=670V D=50% RG=0.8 T J=125C T C=75C
ZCS ZVS
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2004
50 70 90 110 ID, Drain Current (A)
130
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM100UM60F-ALN Rev 0

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